1.54-μm photoluminescence from Er-implanted GaN and AlN

Abstract

We report the observation of the 1.54-μm luminescence of optically excited Er3+ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal-field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.