S. Krishnankutty

High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

Guoqing Xu, A. Salvador, W. Kim et al. · Applied Physics Letters · 1997 · 235 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13

Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes

H. C. Casey, John F. Muth, S. Krishnankutty et al. · Applied Physics Letters · 1996 · 217 citations

Room Temperature, Electrical Engineering, Solid-state Lighting +11

Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition

M. Asif Khan, J. N. Kuznia, J. M. Van Hove et al. · Applied Physics Letters · 1991 · 171 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells

M. Asif Khan, R. A. Skogman, J. M. Van Hove et al. · Applied Physics Letters · 1990 · 114 citations

Optical Materials, Engineering, Photoluminescence +11

Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise

Wei Yang, Thomas Nohova, S. Krishnankutty et al. · Applied Physics Letters · 1998 · 89 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14