Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells

Abstract

AlxGa1−xN-GaN quantum wells were grown on basal plane sapphire by low-pressure metalorganic vapor deposition. The photoluminescence spectra of samples of different well thicknesses and x values were measured. The experimental data were compared with the calculated solutions of the finite square quantum well and the bound states involved in the optical transition were identified.