Applied Physics Letters · 1990 · 114 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsMetalorganic Chemical Vapor DepositionPhotoluminescencePhotoluminescence In Quantum WellsPhotoluminescence SpectroscopyQuantum Well Growth TechniquesQuantum Well HeterostructuresQuantum Well Structures
AlxGa1−xN-GaN quantum wells were grown on basal plane sapphire by low-pressure metalorganic vapor deposition. The photoluminescence spectra of samples of different well thicknesses and x values were measured. The experimental data were compared with the calculated solutions of the finite square quantum well and the bound states involved in the optical transition were identified.
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