R. A. Skogman - Concepedia

Author

R. A. Skogman

Omega Optics (United States)

Also Known As

R. A. Skogman, R. Skogman, RA Skogman

Publications

708

Citations

H-Index

Concepts

All Affiliations

Omega Optics (United States)Honeywell (United States)University of Southern California Material Sciences (United States)

About

R. A. Skogman is an author at Omega Optics (United States) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	678
2	Applied Physics	8	8	678
3	Electrical Engineering	6	6	451
4	Materials Science	4	4	393
5	Materials Engineering	2	2	213

R. A. Skogman

Publications

678

Citations

H-Index

Page 1

	Year	Citations
Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells M. Asif Khan, R. A. Skogman, J. M. Van Hove, Applied Physics Letters Optical MaterialsEngineeringPhotoluminescencePhysicsOptical Properties	1990	114
Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates M. Asif Khan, J. N. Kuznia, R. A. Skogman, Applied Physics Letters Materials ScienceMaterials EngineeringAluminium NitrideEngineeringSapphire Substrates	1992	113
Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition M. Asif Khan, R. A. Skogman, J. M. Van Hove, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	1992	106
Properties and ion implantation of Al<i>x</i>Ga1−<i>x</i>N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition M. Asif Khan, R. A. Skogman, R. G. Schulze, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringIon ImplantationEngineering	1983	100
Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed <i>p</i>-type layers M. Asif Khan, Q. Chen, R. A. Skogman, Applied Physics Letters Optical MaterialsEngineeringViolet-blue Gan HomojunctionOptoelectronic DevicesSemiconductors	1995	83
Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition M. Asif Khan, R. A. Skogman, R. G. Schulze, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringIon ImplantationEngineering	1983	74
Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature M. Asif Khan, S. Krishnankutty, R. A. Skogman, Applied Physics Letters Optical PumpingPhotonicsElectrical EngineeringRoom TemperatureEngineering	1994	67
GaAs/AlGaAs distributed feedback-transverse junction stripe laser using a hybrid liquid phase epitaxy/metal-organic chemical vapor deposition growth technique Hideo Kawanishi, M. J. Hafich, R. A. Skogman, Journal of Applied Physics EngineeringLaser ScienceLaser ApplicationsLaser MaterialSurface-emitting Lasers	1981	21

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