R. A. Skogman

Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells

M. Asif Khan, R. A. Skogman, J. M. Van Hove et al. · Applied Physics Letters · 1990 · 114 citations

Optical Materials, Engineering, Photoluminescence +11

Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates

M. Asif Khan, J. N. Kuznia, R. A. Skogman et al. · Applied Physics Letters · 1992 · 113 citations

Materials Science, Materials Engineering, Aluminium Nitride +15

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

M. Asif Khan, R. A. Skogman, J. M. Van Hove et al. · Applied Physics Letters · 1992 · 106 citations

Materials Science, Semiconductors, Electrical Engineering +13

Properties and ion implantation of Al<i>x</i>Ga1−<i>x</i>N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition

M. Asif Khan, R. A. Skogman, R. G. Schulze et al. · Applied Physics Letters · 1983 · 100 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed <i>p</i>-type layers

M. Asif Khan, Q. Chen, R. A. Skogman et al. · Applied Physics Letters · 1995 · 83 citations

Optical Materials, Engineering, Violet-blue Gan Homojunction +17