Properties and ion implantation of Al<i>x</i>Ga1−<i>x</i>N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition

Abstract

High quality single crystal films of AlxGa1−xN have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 °C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be+ and N+ implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. We also report some initial results of a study of GaN growth kinetics.