R. G. Schulze

Properties and ion implantation of Al<i>x</i>Ga1−<i>x</i>N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition

M. Asif Khan, R. A. Skogman, R. G. Schulze et al. · Applied Physics Letters · 1983 · 100 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition

M. Asif Khan, R. A. Skogman, R. G. Schulze et al. · Applied Physics Letters · 1983 · 74 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Solid-State Infrared-Wavelength Converter Employing High-Quantum-Efficiency Ge-GaAs Heterojunction

Paul W. Kruse, F. C. Pribble, R. G. Schulze · Journal of Applied Physics · 1967 · 39 citations

Semiconductors, Photonics, Electrical Engineering +11

Some Characteristics of GaAs–Ge Epitaxy

R. G. Schulze · Journal of Applied Physics · 1966 · 27 citations

Semiconductors, Electrical Engineering, Engineering +4

Impurity Conductivity in Single-Crystal CdS

B. A. Kulp, K. A. Gale, R. G. Schulze · Physical Review · 1965 · 14 citations

Semiconductors, Ii-vi Semiconductor, Impurity Conductivity +14