A. Salvador - Concepedia

Author

A. Salvador

Also Known As

A Salvador, A. A. Salvador, A. Salvador, A.A. Salvador, Alok Srivastava, Aluizio Jose Salvador, P A Salvador, P. A Salvador, P. A. SALVADOR, P. A. Salvador

328

Publications

Citations

H-Index

127

Concepts

All Affiliations

Carnegie Mellon University University of Illinois Urbana-Champaign National Energy Technology Laboratory Arizona State University Centre National de la Recherche Scientifique

About

A. Salvador is an author at Carnegie Mellon University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	49	130	7.4K
2	Applied Physics	44	108	5.9K
3	Natural Sciences	6	6	193
4	Health Sciences	1	1	12
5	Biostatistics	1	1	15

A. Salvador

154

Publications

Citations

H-Index

Page 1

	Year	Citations
Photocatalysts with internal electric fields Li Li, A. Salvador, Gregory S. Rohrer Nanoscale Materials ScienceCatalyst ParticlesChemical EngineeringEngineeringPhotochemistry	2013	749
Emerging gallium nitride based devices S. Noor Mohammad, A. Salvador, H. Morkoç̌ Proceedings of the IEEE Materials ScienceWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1995	610
High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures Guoqing Xu, A. Salvador, W. Kim, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringShort Wavelength OpticEngineering	1997	235
<i>In situ</i> characterization of strontium surface segregation in epitaxial La0.7Sr0.3MnO3 thin films as a function of oxygen partial pressure T. T. Fister, Dillon D. Fong, J. A. Eastman, Applied Physics Letters Oxide HeterostructuresMaterials ScienceMaterial AnalysisStrontium Surface ConcentrationEngineering	2008	174
GaN grown on hydrogen plasma cleaned 6H-SiC substrates Mao Lin, S. Strite, Anchal Agarwal, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	1993	168
On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy Wook Kim, A. Botchkarev, A. Salvador, Journal of Applied Physics Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringImpurity Incorporation	1997	167
Nature of Mg impurities in GaN J. Z. Li, J. Y. Lin, H. X. Jiang, Applied Physics Letters Materials EngineeringMaterials ScienceWide-bandgap SemiconductorMg ImpuritiesEngineering	1996	157
High transconductance-normally-off GaN MODFETs A. Özgür, W. Kim, Zongjian Fan, Electronics Letters Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceTransconductance Value	1995	141
Spatially selective visible light photocatalytic activity of TiO2/BiFeO3 heterostructures Andrew M. Schultz, A. Salvador, Gregory S. Rohrer Journal of Materials Chemistry Tio2/bifeo3 HeterostructuresVisible LightEngineeringChemistryPhotoelectrochemistry	2011	136
Mechanisms of band-edge emission in Mg-doped <i>p</i>-type GaN M. Smith, G. D. Chen, J. Y. Lin, Applied Physics Letters SemiconductorsDecay KineticsElectrical EngineeringWide-bandgap SemiconductorEngineering	1996	129

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