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<i>In situ</i> characterization of strontium surface segregation in epitaxial La0.7Sr0.3MnO3 thin films as a function of oxygen partial pressure
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Citations
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References
2008
Year
Oxide HeterostructuresMaterials ScienceMaterial AnalysisStrontium Surface ConcentrationEngineeringOxide ElectronicsSurface ScienceApplied PhysicsCondensed Matter PhysicsLa0.7sr0.3mno3 Thin FilmsStrontium Surface SegregationThin Film Process TechnologyThin FilmsEpitaxial GrowthThin Film ProcessingOxygen Partial Pressure
Using in situ synchrotron measurements of total reflection x-ray fluorescence, we find evidence of strontium surface segregation in (001)-oriented La0.7Sr0.3MnO3 thin films over a wide range of temperatures (25–900 °C) and oxygen partial pressures (pO2=0.15–150 Torr). The strontium surface concentration is observed to increase with decreasing pO2, suggesting that the surface oxygen vacancy concentration plays a significant role in controlling the degree of segregation. Interestingly, the enthalpy of segregation becomes less exothermic with increasing pO2, varying from −9.5 to −2.0 kJ/mol. In contrast, the La0.7Sr0.3MnO3 film thickness and epitaxial strain state have little impact on segregation behavior.
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