B. Pipeleers

Defect accumulation during channeled erbium implantation into GaN

B. Pipeleers, Susan M. Hogg, A. Vantomme · Journal of Applied Physics · 2005 · 53 citations

Engineering, Materials Engineering, Materials Science +17

Er-defect complexes and isolated Er center spectroscopy in Er-implanted GaN

Alain Braud, J.L. Doualan, R. Moncorgé et al. · Materials Science and Engineering B · 2003 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +15

Suppression of rare-earth implantation-induced damage in GaN

A. Vantomme, S. Hogg, M. F. Wu et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 29 citations

Engineering, Electrical Engineering, Materials Engineering +10

Influence of the implantation angle on the generation of defects for Er implanted GaN

B. Pipeleers, S. Hogg, A. Vantomme · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 18 citations

Engineering, Materials Engineering, Semiconductor Devices +4

Channeling of low energy heavy ions: Er in Si〈111〉

S. Hogg, B. Pipeleers, A. Vantomme et al. · Applied Physics Letters · 2002 · 17 citations

Engineering, Materials Engineering, Materials Science +13