S. Hogg

Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

M. F. Wu, A. Vantomme, S. Hogg et al. · Applied Physics Letters · 1999 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

Suppression of rare-earth implantation-induced damage in GaN

A. Vantomme, S. Hogg, M. F. Wu et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 29 citations

Engineering, Electrical Engineering, Materials Engineering +10

Influence of the implantation angle on the generation of defects for Er implanted GaN

B. Pipeleers, S. Hogg, A. Vantomme · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 18 citations

Engineering, Materials Engineering, Semiconductor Devices +4

Channeling of low energy heavy ions: Er in Si〈111〉

S. Hogg, B. Pipeleers, A. Vantomme et al. · Applied Physics Letters · 2002 · 17 citations

Engineering, Materials Engineering, Materials Science +13

Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction

M. F. Wu, Shude Yao, A. Vantomme et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 15 citations

Engineering, Materials Engineering, Materials Science +16