S. A. Goodman - Concepedia

Author

S. A. Goodman

University of Pretoria

Also Known As

Goodman, S., S A Goodman, S Goodman, S. A. Goodman, S. A. Goodman S. A. Goodman, S.A Goodman, S.A. Goodman, SA Goodman

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

University of Pretoria Centre National de la Recherche Scientifique Paderborn University Wright State University Pennsylvania State University

About

S. A. Goodman is an author at University of Pretoria specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	31	1.3K
2	Applied Physics	19	32	1.3K
3	Electrical Engineering	18	27	1.2K
4	Natural Sciences	4	4	434
5	Materials Engineering	1	1	12

S. A. Goodman

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Electrical characterization of 1.8 MeV proton-bombarded ZnO F.D. Auret, S. A. Goodman, M. Hayes, Applied Physics Letters Wide-bandgap SemiconductorEngineeringNuclear PhysicsSemiconductor DeviceNanoelectronics	2001	296
Electrical characterization of vapor-phase-grown single-crystal ZnO F.D. Auret, S. A. Goodman, M. J. Legodi, Applied Physics Letters Ii-vi SemiconductorElectrical EngineeringCapture BarrierEngineeringPhysics	2002	177
Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation F.D. Auret, S. A. Goodman, F. K. Koschnick, Applied Physics Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringElectron Capture Kinetics	1998	102
Proton bombardment-induced electron traps in epitaxially grown n-GaN F.D. Auret, S. A. Goodman, F. K. Koschnick, Applied Physics Letters SemiconductorsDeep-level Transient SpectroscopyElectrical EngineeringConduction BandEngineering	1999	97
Radiation induced defects in MOVPE grown n-GaN S. A. Goodman, F.D. Auret, F. K. Koschnick, Materials Science and Engineering B Categoryiii-v SemiconductorApplied PhysicsMovpe Grown N-ganGan Power Device	2000	62
The Influence of High Energy Proton Bombardment on the Electrical and Defect Properties of Single-Crystal ZnO F.D. Auret, S. A. Goodman, M. Hayes, Journal of Physics Condensed Matter	2001	56
Sputter deposition-induced electron traps in epitaxially grown n-GaN F.D. Auret, S. A. Goodman, F. K. Koschnick, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologySimilar Electronic Properties	1999	52
The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs S. A. Goodman, F.D. Auret, W.E. Meyer Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Electrical EngineeringEngineeringRf SemiconductorPhysicsApplied Physics	1994	47
Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides F.D. Auret, S. A. Goodman, G. Myburg, Applied Physics A Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsApplied Physics	1993	46
Electrical characteristics of Ar-ion sputter induced defects in epitaxially grown <i>n</i>-GaAs F.D. Auret, S. A. Goodman, G. Myburg, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsElectrical CharacteristicsElectrical EngineeringSemiconductor TechnologyBarrier Height Lowering	1992	33

Page 1