Applied Physics Letters · 2001 · 297 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDefects In Electronic MaterialsDevice CharacterizationMetal-semiconductor ContactsOxide SemiconductorsRadiation Damage In MaterialsSemiconductor DefectsCapacitanceCapacitance-voltage MeasurementsDeep-level DefectsRadiation DefectsRadiation EffectsRadiation-induced DefectsSchottky ContactsTraps
We report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons. From capacitance–voltage measurements, we found that ZnO is remarkably resistant to high-energy proton bombardment and that each incident proton removes about two orders of magnitude less carriers than in GaN. Deep level transient spectroscopy indicates a similar effect: the two electron traps detected are introduced in extremely low rates. One possible interpretation of these results is that the primary radiation-induced defects in ZnO may be unstable at room temperature and anneal out without leaving harmful defects that are responsible for carrier compensation.
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Electrical properties of bulk ZnO
D. C. Look, D. C. Reynolds, J. R. Sizelove et al. · Solid State Communications · 1998 · 859 citations
Natural Sciences, Materials Engineering, Materials Science +14
Production and annealing of electron irradiation damage in ZnO
D. C. Look, D. C. Reynolds, J. W. Hemsky et al. · Applied Physics Letters · 1999 · 337 citations
Deep centers in n-GaN grown by reactive molecular beam epitaxy
Z-Q. Fang, D. C. Look, W. Kim et al. · Applied Physics Letters · 1998 · 144 citations