F. K. Koschnick

Temperature dependence of the photostimulated luminescence of X-irradiate BaFBr:Eu²⁺

Th. Hangleiter, F. K. Koschnick, J.‐M. Spaeth et al. · Journal of Physics Condensed Matter · 1990 · 107 citations

X-ray Spectroscopy, Engineering, Luminescent Glass +18

Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation

F.D. Auret, S. A. Goodman, F. K. Koschnick et al. · Applied Physics Letters · 1998 · 102 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11

Proton bombardment-induced electron traps in epitaxially grown n-GaN

F.D. Auret, S. A. Goodman, F. K. Koschnick et al. · Applied Physics Letters · 1999 · 97 citations

Semiconductors, Deep-level Transient Spectroscopy, Electrical Engineering +14

Radiation induced defects in MOVPE grown n-GaN

S. A. Goodman, F.D. Auret, F. K. Koschnick et al. · Materials Science and Engineering B · 2000 · 62 citations

Categoryiii-v Semiconductor, Applied Physics, Movpe Grown N-gan +1

Sputter deposition-induced electron traps in epitaxially grown n-GaN

F.D. Auret, S. A. Goodman, F. K. Koschnick et al. · Applied Physics Letters · 1999 · 52 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12