P. G. Middleton

Origin of Luminescence from InGaN Diodes

K.P. O’Donnell, Robert Martin, P. G. Middleton · Physical Review Letters · 1999 · 489 citations

Materials Science, Optical Materials, Engineering +14

Exciton localization and the Stokes’ shift in InGaN epilayers

Robert Martin, P. G. Middleton, K.P. O’Donnell et al. · Applied Physics Letters · 1999 · 290 citations

Localized Excited State, Engineering, Excitation Energy Transfer +16

Optical linewidths of InGaN light emitting diodes and epilayers

K.P. O’Donnell, T. Breitkopf, H. Kalt et al. · Applied Physics Letters · 1997 · 75 citations

White Oled, Photonics, Electrical Engineering +15

The dependence of the optical energies on InGaN composition

K.P. O’Donnell, Robert Martin, C. Trager‐Cowan et al. · Materials Science and Engineering B · 2001 · 38 citations

Photonics, Optical Materials, Engineering +7

Photoluminescence of localized excitons in pulsed-laser-deposited GaN

M. Cazzanelli, D. Cole, John F. Donegan et al. · Applied Physics Letters · 1998 · 28 citations

Localized Excitons, Photonics, Solid-state Lighting +11