Test object of the linewidth with a trapezoidal profile and three certified sizes for an SEM and AFM

Abstract

We created a test object of the linewidth with three different certified sizes. Relief structures of the test object are individual steps and protrusions, as well as pitch structures with trapezoidal profile, created by anisotropic etching of monosilicon. The orientation of the silicon surface coincides with the (1 0 0) crystallographic plane. The structures are located in two orthogonal directions. We present the results of the study of the individual relief elements (protrusions and steps) with the help of a scanning electron microscope (SEM) and an atomic-force microscope (AFM). The widths of the upper bases of the protrusions are in the 14–400 nm range. We performed a correlation analysis of the experimental results, which demonstrates the high quality of the created structures.