Mitigation of Low LER with PAG Bonded Resist for EUVL

Abstract

We developed and evaluated PAG bonded resist which is chemically amplified (CA) resist to reduce line edge roughness (LER) in extreme ultraviolet lithography (EUVL). Under electron beam (EB) exposure, it is compared that LER and resolution of photo acid generator (PAG) bonded resist and PAG blended resist which using same PAG and base polymer. It was found that LER and resolution of PAG bonded resist are better than that of PAG blended resist. LER of 3.5 nm in 75 nm L/S and resolution of 25 nm space were achieved. Under EUV exposure, sensitivity of 5.0 mJ/cm2 is achieved.