Concepedia

Line Roughness

Line Roughness is a surface metrology parameter that quantifies the deviations of a measured profile from its mean line within a specified evaluation length, serving as a one-dimensional descriptor of surface texture irregularities.

684

Publications

23.3K

Citations

2.1K

Authors

385

Institutions

Publications per year

2017–2026

99

Variants

Profile Roughness

Parents

Publications

684

Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

Asen Asenov, Savaş Kaya, A. R. Brown · IEEE Transactions on Electron Devices · 2003 · 588 citations

, , +17

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Asen Asenov, A. R. Brown, J. H. Davies et al. · IEEE Transactions on Electron Devices · 2003 · 549 citations

, , +17

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Gareth Roy, A. R. Brown, Fikru Adamu-Lema et al. · IEEE Transactions on Electron Devices · 2006 · 278 citations

, , +17

Statistical variability and reliability in nanoscale FinFETs

Xingsheng Wang, A. R. Brown, B. Cheng et al. · 2011 · 274 citations

, , +16

Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

Fang Tian, Aniruddha Konar, Huili Grace Xing et al. · Physical Review B · 2008 · 252 citations · Full text

, , +17

1–5 of 684

Authors

2.1K

  1. TK
    Takahiro Kozawa

    The University of Osaka, Japan

    50 publications · 2K citations

    24

    h-index

  2. ST
    Seiichi Tagawa

    The University of Osaka, Japan

    36 publications · 1.5K citations

    23

    h-index

  3. TI
    Toshiro Itani

    The University of Osaka, Japan

    29 publications · 1.2K citations

    21

    h-index

  4. PN
    Patrick Naulleau

    Lawrence Berkeley National Laboratory, United States

    25 publications · 617 citations

    17

    h-index

  5. RL
    Robert L. Brainard

    University at Albany, State University of New York, United States

    18 publications · 615 citations

    16

    h-index

1–5 of 2.1K

Institutions

385

  1. IMEC

    Leuven, Belgium

    26 h-index

    230 publications

    7K citations

  2. The University of Osaka

    Osaka, Japan

    24 h-index

    106 publications

    3.9K citations

  3. Intel (United States)

    Santa Clara, United States

    22 h-index

    117 publications

    3.1K citations

  4. Lawrence Berkeley National Laboratory

    Berkeley, United States

    17 h-index

    70 publications

    1.8K citations

  5. The University of Texas at Austin

    Austin, United States

    16 h-index

    58 publications

    1.6K citations

  6. Osaka Research Institute of Industrial Science and Technology

    Osaka, Japan

    16 h-index

    39 publications

    1.1K citations

  7. IBM (United States)

    Armonk, United States

    16 h-index

    80 publications

    2.9K citations

  8. Hitachi (Japan)

    Tokyo, Japan

    15 h-index

    81 publications

    2K citations

1–8 of 385

Venues

  1. 33

    h-index

  2. 30

    h-index

  3. IEEE Transactions on Electron Devices

    40 publications · 3K citations

    27

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 52 publications · 1.6K citations

    24

    h-index

  5. Journal of Micro/Nanolithography MEMS and MOEMS

    33 publications · 909 citations

    18

    h-index

1–5