Resist Sensitivity
Resist Sensitivity is the minimum electron dose required to induce a defined solubility change in a radiation-sensitive polymer resist, distinguishing it from other lithographic performance metrics by quantifying the efficiency of pattern transfer in electron beam and thin film lithography processes.
645
Publications
18.3K
Citations
1.8K
Authors
329
Institutions
Publications per year
2017–2026
64
645
1.8K
23
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1–5 of 1.8K
329
The University of Osaka
Osaka, Japan
24 h-index
151 publications
5.1K citations
Paul Scherrer Institute
Villigen, Switzerland
19 h-index
105 publications
3.2K citations
Intel (United States)
Santa Clara, United States
18 h-index
93 publications
1.9K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
17 h-index
47 publications
2.1K citations
NTT (Japan)
Tokyo, Japan
17 h-index
62 publications
1.8K citations
Osaka Research Institute of Industrial Science and Technology
Osaka, Japan
17 h-index
49 publications
1.4K citations

Cornell University
Ithaca, United States
16 h-index
106 publications
3.8K citations
IMEC
Leuven, Belgium
15 h-index
72 publications
1.5K citations
1–8 of 329
71 publications · 2.5K citations
25
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132 publications · 2.6K citations
25
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JJAP · 62 publications · 2K citations
24
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JES · 35 publications · 1.2K citations
22
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61 publications · 1.4K citations
21
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