Resist Sensitivity

Resist Sensitivity is the minimum electron dose required to induce a defined solubility change in a radiation-sensitive polymer resist, distinguishing it from other lithographic performance metrics by quantifying the efficiency of pattern transfer in electron beam and thin film lithography processes.

645

Publications

18.3K

Citations

1.8K

Authors

329

Institutions

Publications per year

2017–2026

64

Authors

1.8K

  1. TK
    Takahiro Kozawa

    The University of Osaka, Japan

    46 publications · 1.9K citations

    23

    h-index

  2. ST
    Seiichi Tagawa

    The University of Osaka, Japan

    41 publications · 1.6K citations

    22

    h-index

  3. TI
    Toshiro Itani

    The University of Osaka, Japan

    30 publications · 957 citations

    19

    h-index

  4. YE
    Yasin Ekinci

    Paul Scherrer Institute, Switzerland

    29 publications · 894 citations

    17

    h-index

  5. MV
    Michaela Vockenhuber

    Paul Scherrer Institute, Switzerland

    17 publications · 545 citations

    15

    h-index

1–5 of 1.8K

Venues

  1. 25

    h-index

  2. 25

    h-index

  3. Japanese Journal of Applied Physics

    JJAP · 62 publications · 2K citations

    24

    h-index

  4. Journal of The Electrochemical Society

    JES · 35 publications · 1.2K citations

    22

    h-index

  5. Journal of Photopolymer Science and Technology

    61 publications · 1.4K citations

    21

    h-index

1–5