Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU

Abstract

A standard assessment system for resist development with extreme ultraviolet (EUV) light was developed. The system for the evaluation of an EUV resist was installed at the BL3 beamline in the NewSUBARU synchrotron radiation facility. This optical system simulates a six-mirror imaging system. Incident light is reflected seven times in the chamber. The centroid wavelength is 13.57 nm. The beam size at the sample surface is 4×4 mm 2 and we can take twelve shots for each sample by moving the sample in the lateral direction. Furthermore, a highly sensitive quadrupole mass spectrometer that can measure the mass numbers of ion species from 1 to 500 and is connected to a resist evaluation chamber is used for resist outgassing analysis under EUV irradiation. The main purpose of this whole system is to evaluate the basic physical and chemical properties of various EUV resists candidates, such as sensitivity and outgas characteristics.