Resist Development
Resist Development is a microfabrication process in thin-film patterning that belongs to the class of lithographic techniques and is specifically distinguished by the selective removal of exposed or unexposed regions of a photosensitive resist layer following radiation exposure, thereby transferring the desired pattern into the resist for subsequent etching or deposition steps.
351
Publications
10.4K
Citations
1.2K
Authors
239
Institutions
Publications per year
2017–2026
22
Parents
351
Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
Joel K. W. Yang, B. Cord, Huigao Duan et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009 · 181 citations · Full text
Natural Sciences, Electrical Engineering, Materials Science +13
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IBM (United States)
Armonk, United States
15 h-index
56 publications
1.9K citations
The University of Osaka
Osaka, Japan
14 h-index
48 publications
1.5K citations
University of California, Berkeley
Berkeley, United States
13 h-index
29 publications
1.6K citations

Cornell University
Ithaca, United States
13 h-index
60 publications
2.2K citations
Intel (United States)
Santa Clara, United States
12 h-index
39 publications
736 citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
12 h-index
46 publications
2K citations
IBM Research - Almaden
San Jose, United States
12 h-index
36 publications
1.2K citations
MIT Lincoln Laboratory
Lexington, United States
10 h-index
48 publications
997 citations
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92 publications · 2K citations
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46 publications · 1.7K citations
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JJAP · 26 publications · 1.1K citations
15
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29 publications · 564 citations
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19 publications · 401 citations
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