Manish Chandhok

3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

Han Wui Then, Changyang Huang, B. Krist et al. · 2019 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Determination of the line edge roughness specification for 34 nm devices

T. Linton, Manish Chandhok, Bryan J. Rice et al. · 2003 · 44 citations

Engineering, Electrical Engineering, Electronic Materials +13

Long-term stability of Ru-based protection layers in extreme ultraviolet lithography: A surface science approach

Herbert Over, Yunbin He, Attila Farkas et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

Absorbance measurement of polymers at extreme ultraviolet wavelength: Correlation between experimental and theoretical calculations

Young‐Je Kwark, J. Pablo Bravo-Vasquez, Manish Chandhok et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2006 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

Improvement in linewidth roughness by postprocessing

Manish Chandhok, Kent Frasure, E. Steve Putna et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 38 citations · Full text

Engineering, Materials Engineering, Materials Science +16