Han Wui Then

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman et al. · 2011 · 333 citations

Engineering, Electrical Engineering, Materials Engineering +17

Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

Samuel James Bader, Hyunjea Lee, Reet Chaudhuri et al. · IEEE Transactions on Electron Devices · 2020 · 158 citations

Engineering, Computer Engineering, Electrical Engineering +17

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

Nadim Chowdhury, Jori Lemettinen, Qingyun Xie et al. · IEEE Electron Device Letters · 2019 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

M. Radosavljević, G. Dewey, Dipanjan Basu et al. · 2011 · 136 citations

Engineering, Electrical Engineering, Materials Science +13

Regrowth-Free GaN-Based Complementary Logic on a Si Substrate

Nadim Chowdhury, Qingyun Xie, Mengyang Yuan et al. · IEEE Electron Device Letters · 2020 · 132 citations

Engineering, Electrical Engineering, Materials Science +16