Nadim Chowdhury - Concepedia

Concepedia

Author

Nadim Chowdhury

Massachusetts Institute of Technology ORCID

Also Known As

N Chowdhury, N. K. D. CHOWDHURY, N.K.D. Chowdhury, Nadim Chowdhury, Neza Chowdhury, Niloy Chowdhury

62

Publications

2.9K

Citations

20

H-Index

37

Concepts

All Affiliations

Massachusetts Institute of Technology Bangladesh University of Engineering and Technology Technology Innovation Institute Nanopolis Suzhou (China)Rice University

NC

About

Nadim Chowdhury is an author at Massachusetts Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	24	2.7K
2	Applied Physics	18	21	2.7K
3	Electrical Engineering	18	23	2.7K
4	Computer Engineering	4	4	434
5	Materials Engineering	1	1	46

Nadim Chowdhury

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31

Publications

2.9K

Citations

20

H-Index

	Year	Citations
The 2018 GaN power electronics roadmap Hiroshi Amano, Yannick Baines, Edward Beam, Journal of Physics D Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2018	1.2K
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects Koon Hoo Teo, Yuhao Zhang, Nadim Chowdhury, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringPower Electronic SystemsGan TechnologiesPower Electronics	2021	260
Materials and processing issues in vertical GaN power electronics Jie Hu, Yuhao Zhang, Min Sun, Materials Science in Semiconductor Processing Electrical EngineeringEngineeringApplied PhysicsGan Power DevicePower Electronics	2017	156
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices Samuel James Bader, Hyunjea Lee, Reet Chaudhuri, IEEE Transactions on Electron Devices Wide Bandgap PlatformWide-bandgap SemiconductorElectrical EngineeringWide Bandgap MaterialsEngineering	2020	150
p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si Nadim Chowdhury, Jori Lemettinen, Qingyun Xie, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineeringRecessed-gate P-channel MisfetP-gan Mg ConcentrationOptoelectronic Devices	2019	134
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate Nadim Chowdhury, Qingyun Xie, Mengyang Yuan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringComplementary Logic Circuit	2020	124
Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit Yuhao Zhang, Min Sun, Joshua Perozek, IEEE Electron Device Letters EngineeringSwitching ChargesDevice FomsPower Electronic SystemsPower Electronics	2018	121
720-V/0.35-m<inline-formula> <tex-math notation="LaTeX">$\Omega \cdot$ </tex-math> </inline-formula>cm<sup>2</sup>Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers Yuhao Zhang, Mengyang Yuan, Nadim Chowdhury, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringNovel TechnologySelective Removal	2018	96
GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics Nadim Chowdhury, Giuseppe Iannaccone, Gianluca Fiori, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringSub XmlnsEngineeringGan Nanowire	2017	61
Tungsten-Gated GaN/AlGaN <i>p</i>-FET With I<sub>max</sub> > 120 mA/mm on GaN-on-Si Nadim Chowdhury, Qingyun Xie, Tomás Palacios IEEE Electron Device Letters Materials EngineeringSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	2022	46

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