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Suzhou, China
201
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1–5 of 9
Recent Advances in GaN‐Based Power HEMT Devices
Jiaqi He, Wei‐Chih Cheng, Qing Wang et al. · Advanced Electronic Materials · 2021 · 245 citations
p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
Nadim Chowdhury, Jori Lemettinen, Qingyun Xie et al. · IEEE Electron Device Letters · 2019 · 146 citations
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate
Nadim Chowdhury, Qingyun Xie, Mengyang Yuan et al. · IEEE Electron Device Letters · 2020 · 132 citations
1–5 of 201