Mengyang Yuan

Regrowth-Free GaN-Based Complementary Logic on a Si Substrate

Nadim Chowdhury, Qingyun Xie, Mengyang Yuan et al. · IEEE Electron Device Letters · 2020 · 132 citations

Engineering, Electrical Engineering, Materials Science +16

720-V/0.35-m<inline-formula> <tex-math notation="LaTeX">$\Omega \cdot$ </tex-math> </inline-formula>cm²Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers

Yuhao Zhang, Mengyang Yuan, Nadim Chowdhury et al. · IEEE Electron Device Letters · 2018 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

First Demonstration of a Self-Aligned GaN p-FET

Nadim Chowdhury, Qingyun Xie, Mengyang Yuan et al. · 2019 · 45 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

Mengyang Yuan, John Niroula, Qingyun Xie et al. · IEEE Electron Device Letters · 2023 · 41 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

Mengyang Yuan, Qingyun Xie, Kai Fu et al. · IEEE Electron Device Letters · 2022 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +16