Statistics
Publications
26
Citations
1.1K
H-Index
18
Active since
2015
Qingyun Xie is an author at Massachusetts Institute of Technology specializing in semiconductor devices, engineering, and electrical engineering.
Publications per year
2015–2024
26
26
p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
Nadim Chowdhury, Jori Lemettinen, Qingyun Xie et al. · IEEE Electron Device Letters · 2019 · 146 citations
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate
Nadim Chowdhury, Qingyun Xie, Mengyang Yuan et al. · IEEE Electron Device Letters · 2020 · 132 citations
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