Kai Liu

10 kV, 39 mΩ·cm² Multi-Channel AlGaN/GaN Schottky Barrier Diodes

Ming Xiao, Yunwei Ma, Kai Liu et al. · IEEE Electron Device Letters · 2021 · 105 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Ming Xiao, Yunwei Ma, Kai Cheng et al. · IEEE Electron Device Letters · 2020 · 96 citations

Wide-bandgap Semiconductor, Novel Edge Termination, Electrical Engineering +11

Efficiency of light emission in high aluminum content AlGaN quantum wells

Max Shatalov, Jinwei Yang, Wenhong Sun et al. · Journal of Applied Physics · 2009 · 77 citations

Aluminium Nitride, Optical Materials, Engineering +20

The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT

Kai Liu, Runhao Wang, Chong Wang et al. · Semiconductor Science and Technology · 2022 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

Yanjun Li, Shu Yang, Kai Liu et al. · IEEE Transactions on Electron Devices · 2022 · 12 citations

Semiconductors, Gan Drift Layer, Electrical Engineering +9