IEEE Transactions on Nuclear Science · 1994 · 170 citations · 32 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice ModelingDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor ReliabilityCharge TrappingCharge Trapping AnalysisCharge TrapsExposure Time DependenceInterface Trap ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingTrapping EffectsTraps
Metal-oxide semiconductor field-effect transistors (MOSFETs) were irradiated and then annealed under alternating positive and negative bias. The magnitude of the reversible trapped-oxide charge component decayed over the course of several cycles (of 3/spl times/10/sup 3/ s each) in one of two processes studied. The HDL hole trap model is shown to explain these and other recent results.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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