F. J. Feigl

Oxygen vacancy model for the E1′ center in SiO2

F. J. Feigl, W. Beall Fowler, Kwok L. Yip · Solid State Communications · 1974 · 523 citations

Engineering, Oxide Electronics, Applied Physics +4

The effects of water on oxide and interface trapped charge generation in thermal SiO2 films

F. J. Feigl, Donald R. Young, D. J. DiMaria et al. · Journal of Applied Physics · 1981 · 205 citations

Engineering, Silicon On Insulator, Charge Transport +17

Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors

Richard Gale, F. J. Feigl, C. W. Magee et al. · Journal of Applied Physics · 1983 · 160 citations

Engineering, Chemistry, Silicon On Insulator +18

Defects in crystalline quartz: Electron paramagnetic resonance of E' vacancy centers associated with germanium impurities

F. J. Feigl, John H. Anderson · Journal of Physics and Chemistry of Solids · 1970 · 133 citations

Materials Science, Engineering, Physics +10

Positive charge generation in metal-oxide-semiconductor capacitors

L. Trombetta, F. J. Feigl, Robert J. Zeto · Journal of Applied Physics · 1991 · 118 citations

Engineering, Hole Injection, Avalanche Hole Injection +17