F. J. Feigl - Concepedia

Author

F. J. Feigl

Lehigh University

Also Known As

F. J. FEIGL, F. J. Feigl, F.J. Feigl, FRANK J. FEIGL, Frank J. Feigl

Publications

Citations

H-Index

Concepts

All Affiliations

Lehigh University IBM Research - Thomas J. Watson Research Center RCA (United States)Brookhaven National Laboratory Honeywell (United States)

About

F. J. Feigl is an author at Lehigh University specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	25	1.7K
2	Applied Physics	17	22	1.6K
3	Chemistry	10	10	908
4	Natural Sciences	5	5	355
5	Chemical Engineering	3	3	56

F. J. Feigl

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Oxygen vacancy model for the E1′ center in SiO2 F. J. Feigl, W. Beall Fowler, Kwok L. Yip Solid State Communications EngineeringOxide ElectronicsApplied PhysicsCondensed Matter PhysicsChemistry	1974	523
The effects of water on oxide and interface trapped charge generation in thermal SiO2 films F. J. Feigl, Donald R. Young, D. J. DiMaria, Journal of Applied Physics EngineeringSilicon On InsulatorCharge TransportMobile Hydrogen AtomsSemiconductors	1981	205
Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors Richard Gale, F. J. Feigl, C. W. Magee, Journal of Applied Physics EngineeringChemistrySilicon On InsulatorCharge TransportHydrogen Release	1983	160
Defects in crystalline quartz: Electron paramagnetic resonance of E' vacancy centers associated with germanium impurities F. J. Feigl, John H. Anderson Journal of Physics and Chemistry of Solids Materials ScienceEngineeringPhysicsCrystalline DefectsCrystal Material	1970	133
Positive charge generation in metal-oxide-semiconductor capacitors L. Trombetta, F. J. Feigl, Robert J. Zeto Journal of Applied Physics EngineeringHole InjectionAvalanche Hole InjectionCharge TransportSemiconductor Device	1991	118
Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunneling W. Beall Fowler, Jayanta K. Rudra, M. E. Zvanut, Physical review. B, Condensed matter Quantum ScienceElectrical EngineeringEngineeringTunneling MicroscopyPhysics	1990	89
Reduction of electron trapping in silicon dioxide by high-temperature nitrogen anneal Sz‐Nian Lai, Donald R. Young, J. A. Calise, Journal of Applied Physics Electrical EngineeringSemiconductor DeviceEngineeringPhysicsNanoelectronics	1981	56
Rechargeable <i>E</i>′ centers in sputter-deposited silicon dioxide films M. E. Zvanut, F. J. Feigl, W. Beall Fowler, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringParamagnetic ResonanceEngineering	1989	52
Electron trapping levels in silicon dioxide thermally grown on silicon J. H. Thomas, F. J. Feigl Journal of Physics and Chemistry of Solids Electrical EngineeringEngineeringPhysicsElectron Trapping LevelsApplied Physics	1972	45
Energy and spatial distribution of an electron trapping center in the MOS insulator Vikram Kapoor, F. J. Feigl, S. R. Butler Journal of Applied Physics EngineeringElectron Trapping CentersOptoelectronic DevicesIntegrated CircuitsElectron Physic	1977	43

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