Concepedia

Interface Trap Modeling

Interface Trap Modeling is a computational modeling approach in semiconductor device simulation that specifically characterizes the electrical and physical effects of defect states at material interfaces by quantifying their energy distribution, density, and charge exchange dynamics within the bandgap.

366

Publications

14.2K

Citations

1.3K

Authors

365

Institutions

Publications per year

2017–2026

81

Parents

Publications

366

A Comparative Study of Different Physics-Based NBTI Models

Souvik Mahapatra, Nilesh Goel, Sujay B. Desai et al. · IEEE Transactions on Electron Devices · 2013 · 299 citations

, , +16

Investigation and Modeling of Interface and Bulk Trap Generation During Negative Bias Temperature Instability of p-MOSFETs

Souvik Mahapatra, P. BharathKumar, Muhammad A. Alam · IEEE Transactions on Electron Devices · 2004 · 225 citations

, , +17

Modeling the anneal of radiation-induced trapped holes in a varying thermal environment

P. J. McWhorter, S. L. Miller, W.M. Miller · IEEE Transactions on Nuclear Science · 1990 · 218 citations · Full text

, , +16

Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination

R. Girisch, R. Mertens, R. F. De Keersmaecker · IEEE Transactions on Electron Devices · 1988 · 210 citations

, , +14

Physical model for enhanced interface-trap formation at low dose rates

Sergey N. Rashkeev, C.R. Cirba, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2002 · 196 citations

, , +17

1–5 of 366

Authors

1.3K

  1. SM
    Souvik Mahapatra

    Indian Institute of Technology Bombay, India

    20 publications · 1.3K citations

    17

    h-index

  2. DM
    Daniel M. Fleetwood

    Vanderbilt University, United States

    12 publications · 826 citations

    12

    h-index

  3. NP
    Narendra Parihar

    Indian Institute of Technology Bombay, India

    9 publications · 423 citations

    9

    h-index

  4. RD
    Ronald D. Schrimpf

    Vanderbilt University, United States

    9 publications · 642 citations

    9

    h-index

  5. NG
    Nilesh Goel

    Indian Institute of Technology Bombay, India

    7 publications · 626 citations

    7

    h-index

1–5 of 1.3K

Institutions

365

  1. Indian Institute of Technology Bombay

    Mumbai, India

    17 h-index

    78 publications

    5.3K citations

  2. Centre National de la Recherche Scientifique

    Paris, France

    12 h-index

    32 publications

    975 citations

  3. Vanderbilt University

    Nashville, United States

    12 h-index

    47 publications

    3.4K citations

  4. National Institute of Standards and Technology

    Gaithersburg, United States

    11 h-index

    24 publications

    1K citations

  5. IMEC

    Leuven, Belgium

    10 h-index

    35 publications

    1.8K citations

  6. Purdue University West Lafayette

    West Lafayette, United States

    9 h-index

    20 publications

    2K citations

  7. Sandia National Laboratories

    Albuquerque, United States

    9 h-index

    18 publications

    2K citations

  8. Stanford University

    Stanford, United States

    7 h-index

    22 publications

    1.4K citations

1–8 of 365

Venues

  1. IEEE Transactions on Electron Devices

    63 publications · 3.2K citations

    30

    h-index

  2. IEEE Transactions on Nuclear Science

    36 publications · 2.1K citations

    22

    h-index

  3. Journal of Applied Physics

    37 publications · 1.5K citations

    20

    h-index

  4. Applied Physics Letters

    19 publications · 895 citations

    19

    h-index

  5. IEEE Electron Device Letters

    21 publications · 754 citations

    16

    h-index

1–5