R. F. De Keersmaecker

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken, H.E. Maes, N. Beltran et al. · IEEE Transactions on Electron Devices · 1984 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

Electron trapping in SiO2 at 295 and 77 °K

Donald R. Young, E. A. Irene, D. J. DiMaria et al. · Journal of Applied Physics · 1979 · 254 citations

Engineering, Materials Engineering, Materials Science +17

Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination

R. Girisch, R. Mertens, R. F. De Keersmaecker · IEEE Transactions on Electron Devices · 1988 · 210 citations

Engineering, Electrical Engineering, Materials Science +14

A self-aligned CoSi₂interconnection and contact technology for VLSI applications

Luc Van den hove, R.A.M. Wolters, Karen Maex et al. · IEEE Transactions on Electron Devices · 1987 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique

N. S. Saks, Paul Heremans, Luc Van den hove et al. · IEEE Transactions on Electron Devices · 1986 · 79 citations

Engineering, Electrical Engineering, Electronic Materials +15