Narendra Parihar

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Suraj Cheema, Nirmaan Shanker, Li‐Chen Wang et al. · Nature · 2022 · 348 citations · Full text

Engineering, Materials Engineering, Materials Science +12

BTI Analysis Tool—Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation

Narendra Parihar, Nilesh Goel, Subhadeep Mukhopadhyay et al. · IEEE Transactions on Electron Devices · 2017 · 124 citations

Engineering, Electrical Engineering, Electronic Materials +15

Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions

Narendra Parihar, Uma Sharma, Richard G. Southwick et al. · IEEE Transactions on Electron Devices · 2017 · 68 citations

Engineering, Electrical Engineering, Physics +17

A Modeling Framework for NBTI Degradation Under Dynamic Voltage and Frequency Scaling

Narendra Parihar, Nilesh Goel, Ankush Chaudhary et al. · IEEE Transactions on Electron Devices · 2016 · 59 citations

Engineering, Electrical Engineering, Microelectronics +16

A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact

Ravi Tiwari, Narendra Parihar, Karansingh Thakor et al. · IEEE Transactions on Electron Devices · 2019 · 57 citations

Engineering, Electrical Engineering, Materials Science +17