Narendra Parihar

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Suraj Cheema, Nirmaan Shanker, Li‐Chen Wang et al. · Nature · 2022 · 320 citations · Full text

Oxide Heterostructures, Electrical Engineering, Engineering +5

BTI Analysis Tool—Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation

Narendra Parihar, Nilesh Goel, Subhadeep Mukhopadhyay et al. · IEEE Transactions on Electron Devices · 2017 · 123 citations

Engineering, Energy Efficiency, Electronic Packaging +16

Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions

Narendra Parihar, Uma Sharma, Richard G. Southwick et al. · IEEE Transactions on Electron Devices · 2017 · 68 citations

Engineering, Rmg Finfets, Nbti Stress +16

A Modeling Framework for NBTI Degradation Under Dynamic Voltage and Frequency Scaling

Narendra Parihar, Nilesh Goel, Ankush Chaudhary et al. · IEEE Transactions on Electron Devices · 2016 · 59 citations

Applied Mathematical Modelling, Engineering, Simulation +19

A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact

Ravi Tiwari, Narendra Parihar, Karansingh Thakor et al. · IEEE Transactions on Electron Devices · 2019 · 54 citations

Device Modeling, Electrical Engineering, Physical Design (Electronics) +14