Uma Sharma

Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions

Narendra Parihar, Uma Sharma, Richard G. Southwick et al. · IEEE Transactions on Electron Devices · 2017 · 68 citations

Engineering, Rmg Finfets, Nbti Stress +16

Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs

Narendra Parihar, Uma Sharma, Subhadeep Mukhopadhyay et al. · 2017 · 32 citations

Device Modeling, Reliable Nbti Model, Electrical Engineering +15

Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs

Narendra Parihar, Richard G. Southwick, Uma Sharma et al. · 2017 · 30 citations

Device Modeling, Rmg Si, Electrical Engineering +14

A SPICE Compatible Compact Model for Hot-Carrier Degradation in MOSFETs Under Different Experimental Conditions

Uma Sharma, Souvik Mahapatra · IEEE Transactions on Electron Devices · 2018 · 24 citations

Engineering, Energy Efficiency, Time Kinetics Model +16

Analysis of BTI, SHE Induced BTI and HCD Under Full V_G/V_D Space in GAA Nano-Sheet N and P FETs

Nilotpal Choudhury, Uma Sharma, Huimei Zhou et al. · 2020 · 23 citations

Wide-bandgap Semiconductor, Engineering, Integrated Circuits +21