Richard G. Southwick

A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

Luca Vandelli, Andrea Padovani, Luca Larcher et al. · IEEE Transactions on Electron Devices · 2011 · 260 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 99 citations

Engineering, Computer Engineering, Electrical Engineering +17

Stacked Dual-Oxide MOS Energy Band Diagram Visual Representation Program (IRW Student Paper)

Richard G. Southwick, William B. Knowlton · IEEE Transactions on Device and Materials Reliability · 2006 · 97 citations

Engineering, Materials Engineering, Materials Science +17

An Interactive Simulation Tool for Complex Multilayer Dielectric Devices

Richard G. Southwick, Aaron Sup, Alok Jain et al. · IEEE Transactions on Device and Materials Reliability · 2011 · 71 citations

Engineering, Electrical Engineering, Materials Science +17