Concepedia

Karansingh Thakor

KT

5

Publications

172

Citations

5

H-Index

2018

Active since

Affiliations

Indian Institute of Technology Bombay(Current)

San Jose State University

Synopsys (United States)

Karansingh Thakor is an author at Indian Institute of Technology Bombay specializing in applied physics, microelectronics, and device modeling.

Top concepts

EngineeringApplied PhysicsDevice ModelingMicroelectronicsPhysicsElectrical EngineeringNanoelectronicsIntegrated CircuitsNumerical SimulationVlsi Design

Publications per year

2018–2023

5

Publications

5

A Simulation Study of NBTI Impact on 14-nm Node FinFET Technology for Logic Applications: Device Degradation to Circuit-Level Interaction

Subrat Mishra, Hussam Amrouch, Jerin Joe et al. · IEEE Transactions on Electron Devices · 2018 · 59 citations

Slope Shift, Engineering, Vlsi Design +18

A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact

Ravi Tiwari, Narendra Parihar, Karansingh Thakor et al. · IEEE Transactions on Electron Devices · 2019 · 54 citations

Device Modeling, Electrical Engineering, Physical Design (Electronics) +14

A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling

Ravi Tiwari, Narendra Parihar, Karansingh Thakor et al. · IEEE Transactions on Electron Devices · 2019 · 32 citations

Engineering, Finfet Dimension Scaling, Integrated Circuits +19

TCAD Framework for HCD Kinetics in Low V<sub>D</sub> Devices Spanning Full V<sub>G</sub>/V<sub>D</sub> Space

Uma Sharma, Meng Duan, Himanshu Diwakar et al. · IEEE Transactions on Electron Devices · 2020 · 16 citations

Engineering, Hot Carrier Degradation, Computational Chemistry +17

A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD

Souvik Mahapatra, Himanshu Diwakar, Karansingh Thakor et al. · IEEE Transactions on Electron Devices · 2023 · 11 citations

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