Charge Trapping Analysis
Charge Trapping Analysis is a device characterization method that identifies and quantifies the capture and retention of charge carriers within defect states of semiconductor materials or interfaces, distinguishing it from other electrical characterization techniques by its focus on transient and non-equilibrium charge immobilization effects.
424
Publications
15.8K
Citations
1.6K
Authors
454
Institutions
Publications per year
2017–2026
75
Parents
424
1–5 of 424
1.6K
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454
IMEC
Leuven, Belgium
16 h-index
135 publications
4.8K citations
KU Leuven
Leuven, Belgium
13 h-index
59 publications
2.5K citations

Centre National de la Recherche Scientifique
Paris, France
11 h-index
37 publications
993 citations
IBM (United States)
Armonk, United States
10 h-index
43 publications
2.4K citations
National University of Singapore
Singapore, Singapore
10 h-index
40 publications
904 citations
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Paris, France
10 h-index
35 publications
2K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
10 h-index
19 publications
1.1K citations

University of Padua
Padua, Italy
9 h-index
38 publications
1.6K citations
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50 publications · 2.2K citations
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46 publications · 1.9K citations
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35 publications · 1.2K citations
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26 publications · 1K citations
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25 publications · 900 citations
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