Charge Trapping Analysis

Charge Trapping Analysis is a device characterization method that identifies and quantifies the capture and retention of charge carriers within defect states of semiconductor materials or interfaces, distinguishing it from other electrical characterization techniques by its focus on transient and non-equilibrium charge immobilization effects.

424

Publications

15.8K

Citations

1.6K

Authors

454

Institutions

Publications per year

2017–2026

75

Authors

1.6K

  1. BK
    B. Kaczer

    IMEC, Belgium

    12 publications · 462 citations

    11

    h-index

  2. GG
    G. Groeseneken

    IMEC, Belgium

    10 publications · 422 citations

    10

    h-index

  3. GB
    G. Bersuker

    The University of Texas at Austin, United States

    10 publications · 388 citations

    10

    h-index

  4. JV
    Jan Van Houdt

    IMEC, Belgium

    9 publications · 291 citations

    9

    h-index

  5. HL
    Hang-Ting Lue

    Macronix International (Taiwan), Taiwan

    7 publications · 151 citations

    7

    h-index

1–5 of 1.6K

Venues

  1. Journal of Applied Physics

    50 publications · 2.2K citations

    26

    h-index

  2. IEEE Transactions on Electron Devices

    46 publications · 1.9K citations

    26

    h-index

  3. Applied Physics Letters

    35 publications · 1.2K citations

    20

    h-index

  4. IEEE Transactions on Nuclear Science

    26 publications · 1K citations

    19

    h-index

  5. IEEE Electron Device Letters

    25 publications · 900 citations

    18

    h-index

1–5