The effect of deposition temperature on the properties of TiN diffusion barriers prepared by atomic layer chemical vapor deposition

References

Page 1

	Year	Citations
Thin film atomic layer deposition equipment for semiconductor processing Ofer Sneh, R. Clark-Phelps, A. Londergan, Thin Solid Films EngineeringThin-film FabricationSurface ScienceApplied PhysicsSemiconductor Processing	2002	287
Monolayer thickness in atomic layer deposition Markku Ylilammi Thin Solid Films Materials ScienceEngineeringSurface ScienceApplied PhysicsMonolayer Thickness	1996	137
Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition H. Kim, C. Cabral, C. Lavoie, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringDiffusion Barrier PropertiesThin Film Process TechnologyChemical DepositionSurface Technology	2002	123
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices Jörgen Westlinder, T. Schram, L. Pantisano, IEEE Electron Device Letters Aluminium NitrideEngineeringAld TinWork FunctionAtomic Layer	2003	112
JANAF Thermodynamical tables M. W. Chase Journal of Physical and Chemical Reference Data Thermodynamic ModellingEngineeringJanaf Thermodynamical TablesEntropyThermodynamics	1985	96
Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2 A. Satta, Jörg Schuhmacher, Caroline M. Whelan, Journal of Applied Physics Film Thickness ControlEngineeringThin Film Process TechnologyChemical DepositionSilicon On Insulator	2002	90
Applicability of ALE TiN films as Cu/Si diffusion barriers Dong-Jin Kim, Young‐Bae Jung, Myoung‐Bok Lee, Thin Solid Films Materials ScienceMaterials EngineeringEngineeringDiffusion ResistanceSurface Science	2000	61
Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method Hyeongtag Jeon, June-Woo Lee, Young‐Do Kim, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringStep CoverageThin Film Process TechnologyChemistryChemical Deposition	2000	54
Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures Dae-Gyu Park, Kwan-Yong Lim, Heung-Jae Cho, Applied Physics Letters EngineeringSemiconductor DevicePoly-si GateMaterials ScienceOxide Heterostructures	2002	50
Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects Gerald Beyer, A. Satta, Jörg Schuhmacher, Microelectronic Engineering Materials ScienceElectrical EngineeringEngineeringNanoelectronicsSurface Science	2002	44

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