Concepedia

Step Coverage

Step Coverage is a thin-film deposition performance metric that quantifies the uniformity of film thickness across topographic features with abrupt changes in height, specifically distinguishing itself by measuring the ratio of the minimum film thickness on a step sidewall to the nominal thickness on a flat surface in processes such as Chemical Vapor Deposition and Physical Vapor Deposition.

355

Publications

16.1K

Citations

1.3K

Authors

258

Institutions

Publications per year

2017–2026

15

Parents

Publications

355

Damascene copper electroplating for chip interconnections

P. C. Andricacos, Cyprian Uzoh, John Dukovic et al. · IBM Journal of Research and Development · 1998 · 1.2K citations

, , +16

Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes

Chang‐Beom Eom, R. B. van Dover, Julia M. Phillips et al. · Applied Physics Letters · 1993 · 439 citations

, , +16

A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches

Roy G. Gordon, Dennis M. Hausmann, E. Kim et al. · Chemical Vapor Deposition · 2003 · 390 citations · Full text

, , +17

Deposition of Conformal Copper and Nickel Films from Supercritical Carbon Dioxide

Jason M. Blackburn, David P. Long, Albertina Cabañas et al. · Science · 2001 · 385 citations

, , +17

Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics

G. S. Higashi, Cass Fleming · Applied Physics Letters · 1989 · 234 citations

, , +17

1–5 of 355

Authors

1.3K

  1. SK
    Soo‐Hyun Kim

    Yeungnam University, South Korea

    9 publications · 268 citations

    9

    h-index

  2. YS
    Yukihiro Shimogaki

    The University of Tokyo, Japan

    7 publications · 206 citations

    7

    h-index

  3. GB
    Gregory B. Raupp

    Arizona State University, United States

    7 publications · 341 citations

    7

    h-index

  4. RG
    Roy G. Gordon

    Harvard University, United States

    7 publications · 908 citations

    7

    h-index

  5. TC
    T.S. Cale

    Arizona State University, United States

    6 publications · 271 citations

    6

    h-index

1–5 of 1.3K

Institutions

258

  1. Seoul National University

    Seoul, South Korea

    10 h-index

    42 publications

    2.1K citations

  2. AT&T (United States)

    Bedminster, United States

    10 h-index

    36 publications

    5.3K citations

  3. Arizona State University

    Tempe, United States

    10 h-index

    28 publications

    901 citations

  4. The University of Tokyo

    Tokyo, Japan

    10 h-index

    43 publications

    1.3K citations

  5. Korea Advanced Institute of Science and Technology

    Daejeon, South Korea

    9 h-index

    27 publications

    1.2K citations

  6. Samsung (South Korea)

    Seoul, South Korea

    9 h-index

    50 publications

    1.2K citations

  7. Hitachi (Japan)

    Tokyo, Japan

    8 h-index

    37 publications

    1.1K citations

  8. IBM (United States)

    Armonk, United States

    7 h-index

    12 publications

    4.3K citations

1–8 of 258

Venues

  1. Journal of The Electrochemical Society

    JES · 61 publications · 2.9K citations

    30

    h-index

  2. Japanese Journal of Applied Physics

    JJAP · 41 publications · 1.3K citations

    23

    h-index

  3. 20

    h-index

  4. Journal of Applied Physics

    22 publications · 1.3K citations

    18

    h-index

  5. 15

    h-index

1–5