Kwan-Yong Lim - Concepedia

Author

Kwan-Yong Lim

Hyundai Heavy Industries (South Korea)

Also Known As

Kwan-Yong Lim, Kwan-yong Lim, Yoon-Jik Lee

Publications

428

Citations

H-Index

Concepts

All Affiliations

Hyundai Heavy Industries (South Korea)

About

Kwan-Yong Lim is an author at Hyundai Heavy Industries (South Korea) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	247
2	Applied Physics	7	7	247
3	Materials Science	6	6	215
4	Electrical Engineering	5	5	221
5	Materials Engineering	5	5	155

Kwan-Yong Lim

Publications

257

Citations

H-Index

Page 1

	Year	Citations
Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor Dae-Gyu Park, Heung-Jae Cho, Kwan-Yong Lim, Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringH2o VaporEngineering	2001	81
Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures Dae-Gyu Park, Kwan-Yong Lim, Heung-Jae Cho, Applied Physics Letters EngineeringSemiconductor DevicePoly-si GateMaterials ScienceOxide Heterostructures	2002	50
Electrical characteristics and thermal stability of n+ polycrystalline- Si/ZrO2/SiO2/Si metal–oxide–semiconductor capacitors Kwan-Yong Lim, Dae-Gyu Park, Heung-Jae Cho, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringElectrical CharacteristicsH2o Vapor	2002	42
Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices Kwan-Yong Lim, Hyun‐Jung Lee, Choongryul Ryu, Materials EngineeringElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage Current	2010	32
Effects of TiN Deposition on the Characteristics of W/TiN/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors Dae-Gyu Park, Heung-Jae Cho, Kwan-Yong Lim, Journal of The Electrochemical Society EngineeringSilicon On InsulatorSemiconductorsNanoelectronicsHigh Level	2001	16
Boron penetration and thermal instability of p+ polycrystalline-Si/ZrO2/SiO2/n-Si metal-oxide-semiconductor structures Dae-Gyu Park, Kwan-Yong Lim, Heung-Jae Cho, Journal of Applied Physics Materials EngineeringMaterials ScienceEngineeringCrystalline DefectsOxide Electronics	2002	15
Suppressed boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor structures Heung-Jae Cho, Dae-Gyu Park, Kwan-Yong Lim, Applied Physics Letters Materials ScienceSemiconductorsMaterials EngineeringSemiconductor TechnologyEngineering	2002	11
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT Gen Tsutsui, Ruqiang Bao, Kwan-Yong Lim,	2016	10

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