Kwan-Yong Lim

Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

Dae-Gyu Park, Heung-Jae Cho, Kwan-Yong Lim et al. · Journal of Applied Physics · 2001 · 81 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

Dae-Gyu Park, Kwan-Yong Lim, Heung-Jae Cho et al. · Applied Physics Letters · 2002 · 50 citations

Engineering, Semiconductor Device, Poly-si Gate +16

Electrical characteristics and thermal stability of n+ polycrystalline- Si/ZrO2/SiO2/Si metal–oxide–semiconductor capacitors

Kwan-Yong Lim, Dae-Gyu Park, Heung-Jae Cho et al. · Journal of Applied Physics · 2002 · 42 citations

Materials Science, Semiconductors, Electrical Engineering +13

Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices

Kwan-Yong Lim, Hyun‐Jung Lee, Choongryul Ryu et al. · 2010 · 32 citations

Materials Engineering, Electrical Engineering, Engineering +13

Effects of TiN Deposition on the Characteristics of W/TiN/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors

Dae-Gyu Park, Heung-Jae Cho, Kwan-Yong Lim et al. · Journal of The Electrochemical Society · 2001 · 16 citations

Engineering, Silicon On Insulator, Semiconductors +18