Dae-Gyu Park

Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

Dae-Gyu Park, Heung-Jae Cho, Kwan-Yong Lim et al. · Journal of Applied Physics · 2001 · 81 citations

Engineering, Electrical Engineering, Materials Science +17

Robust ternary metal gate electrodes for dual gate CMOS devices

Dae-Gyu Park, Tae-Ho Cha, Kwan-Yong Lim et al. · 2002 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

Dae-Gyu Park, Kwan-Yong Lim, Heung-Jae Cho et al. · Applied Physics Letters · 2002 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor system

Dae-Gyu Park, Heung-Jae Cho, In‐Seok Yeo et al. · Applied Physics Letters · 2000 · 45 citations

Engineering, Materials Engineering, Materials Science +17

Electrical characteristics and thermal stability of n+ polycrystalline- Si/ZrO2/SiO2/Si metal–oxide–semiconductor capacitors

Kwan-Yong Lim, Dae-Gyu Park, Heung-Jae Cho et al. · Journal of Applied Physics · 2002 · 42 citations

Engineering, Materials Engineering, Materials Science +17