Heung-Jae Cho

Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

Dae-Gyu Park, Heung-Jae Cho, Kwan-Yong Lim et al. · Journal of Applied Physics · 2001 · 81 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs

Sanghoon Lee, Heung-Jae Cho, Younghwan Son et al. · 2009 · 53 citations

Metal Gate Mosfets, Electrical Engineering, Engineering +12

Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor system

Dae-Gyu Park, Heung-Jae Cho, In‐Seok Yeo et al. · Applied Physics Letters · 2000 · 45 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

Electrical characteristics and thermal stability of n+ polycrystalline- Si/ZrO2/SiO2/Si metal–oxide–semiconductor capacitors

Kwan-Yong Lim, Dae-Gyu Park, Heung-Jae Cho et al. · Journal of Applied Physics · 2002 · 42 citations

Materials Science, Semiconductors, Electrical Engineering +13

Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

Byoungchan Oh, Heung-Jae Cho, Heesang Kim et al. · IEEE Transactions on Electron Devices · 2011 · 30 citations

Device Modeling, Oxide Trap Leading, Electrical Engineering +13