Heesang Kim

Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

Byoungchan Oh, Heung-Jae Cho, Heesang Kim et al. · IEEE Transactions on Electron Devices · 2011 · 30 citations

Device Modeling, Oxide Trap Leading, Electrical Engineering +13

Characterization of the Variable Retention Time in Dynamic Random Access Memory

Heesang Kim, Byoungchan Oh, Younghwan Son et al. · IEEE Transactions on Electron Devices · 2011 · 25 citations

Non-volatile Memory, Engineering, Variable Retention Time +18

RTS-like fluctuation in Gate Induced Drain Leakage current of Saddle-Fin type DRAM cell transistor

Heesang Kim, Kyungdo Kim, Taekyung Oh et al. · 2009 · 22 citations

Device Modeling, Electrical Engineering, Rts-like Fluctuation +10

Study of Trap Models Related to the Variable Retention Time Phenomenon in DRAM

Heesang Kim, Byoungchan Oh, Younghwan Son et al. · IEEE Transactions on Electron Devices · 2011 · 13 citations

Non-volatile Memory, Engineering, Memory Design +18