Byoungchan Oh

Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

Byoungchan Oh, Heung-Jae Cho, Heesang Kim et al. · IEEE Transactions on Electron Devices · 2011 · 31 citations

Engineering, Electrical Engineering, Electronic Materials +16

Characterization of the Variable Retention Time in Dynamic Random Access Memory

Heesang Kim, Byoungchan Oh, Younghwan Son et al. · IEEE Transactions on Electron Devices · 2011 · 25 citations

Engineering, Computer Engineering, Electrical Engineering +17

$f_{\max}$ Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor

Hee‐Sauk Jhon, Jaehong Lee, Jaeho Lee et al. · IEEE Electron Device Letters · 2009 · 21 citations

Engineering, Electrical Engineering, Microelectronics +16

Investigation of Gate Etch Damage at Metal/High-$k$ Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current

Heung-Jae Cho, Younghwan Son, Byoungchan Oh et al. · IEEE Electron Device Letters · 2011 · 14 citations

Engineering, Electrical Engineering, Materials Science +16

Study of Trap Models Related to the Variable Retention Time Phenomenon in DRAM

Heesang Kim, Byoungchan Oh, Younghwan Son et al. · IEEE Transactions on Electron Devices · 2011 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +16