IEEE Transactions on Electron Devices · 1982 · 83 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsOxide SemiconductorsSemiconductor InterfacesGate Oxide InterfacesHot Carrier EffectsHot Carrier InjectionInterface StatesLateral Electric Field EffectsSaturationSaturation CurrentSaturation Region
The emission of hot electrons and hot holes from n-channel MOSFET's into the gate oxide is investigated as a function of the gate bias for a given lateral electric field. The resulting electron gate current as well as the substrate current are analyzed for both the saturation and the linear regime of the transistor. In the saturation regime, a remarkable increase of interface states occurs which can be correlated with the hole generation due to avalanche multiplication in the high-field region. In this case, the electric field normal to the Si-SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interface near the drain aids in the injection of hot holes along the channel which initiates acceptor-type interface states. In the linear operation regime, however, no pronounced generation of interface states can be detected.
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Electron trapping in SiO2 at 295 and 77 °K
Donald R. Young, E. A. Irene, D. J. DiMaria et al. · Journal of Applied Physics · 1979 · 254 citations