H. Gesch - Concepedia

Concepedia

Author

H. Gesch

Siemens (Germany)

Also Known As

H. Gesch

15

Publications

319

Citations

9

H-Index

27

Concepts

All Affiliations

Siemens (Germany)

HG

About

H. Gesch is an author at Siemens (Germany) specializing in applied physics, physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	9	9	290
2	Engineering	8	8	262
3	Electrical Engineering	3	3	145
4	Materials Science	2	2	48
5	Natural Sciences	1	1	17

H. Gesch

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9

Publications

290

Citations

9

H-Index

	Year	Citations
Generation of interface states by hot hole injection in MOSFET's H. Gesch, Jean‐Pierre Leburton, G. Dorda IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	1982	83
Many-valley interactions in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type silicon inversion layers G. Dorda, I. Eisele, H. Gesch Physical review. B, Condensed matter EngineeringSilicon On InsulatorCharge TransportNanoelectronicsQuantum Materials	1978	45
Valley degeneracy and mobility anisotropy under mechanical stress on (111) silicon inversion layers G. Dorda, H. Gesch, I. Eisele Solid State Communications Materials ScienceEngineeringDislocation InteractionPhysicsApplied Physics	1976	31
Evidence for mobility domains in (100) silicon inversion layers I. Eisele, H. Gesch, G. Dorda Solid State Communications Mobility DomainsPhysicsApplied PhysicsSemiconductor Device FabricationSilicon On Insulator	1976	28
Effective masses in (100) silicon inversion layers I. Eisele, H. Gesch, G. Dorda Solid State Communications Effective MassesEngineeringPhysicsApplied PhysicsSemiconductor Device Fabrication	1977	26
Surface quantum oscillations in (100) inversion layers under uniaxial stress I. Eisele, H. Gesch, G. Dorda Solid State Communications Quantum ScienceSurface Quantum OscillationsEngineeringPhysicsQuantum Device	1976	22
Mechanical stress influence on effective masses in Si inversion layers I. Eisele, H. Gesch, G. Dorda Surface Science Mechanical Stress InfluenceEngineeringPhysicsMechanicsMechanical Engineering	1976	21
Analytical approach of hot electron transport in small size MOSFET's Jean‐Pierre Leburton, H. Gesch, G. Dorda Solid-State Electronics Device ModelingElectrical EngineeringEngineeringSmall Size MosfetApplied Physics	1981	17
Surface quantum oscillations in silicon (100) inversion layers under uniaxial pressure Th. Englert, G. Landwehr, K. von Klitzing, Physical review. B, Condensed matter Surface Quantum OscillationsEngineeringSilicon On InsulatorInversion LayersUniaxial Pressure	1978	17

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