B. Eitan

NROM: A novel localized trapping, 2-bit nonvolatile memory cell

B. Eitan, Paolo Pavan, I. Bloom et al. · IEEE Electron Device Letters · 2000 · 546 citations · Full text

Non-volatile Memory, Engineering, Emerging Memory Technology +19

Analysis and modeling of floating-gate EEPROM cells

Avinoam Kolodny, S. T. K. Nieh, B. Eitan et al. · IEEE Transactions on Electron Devices · 1986 · 178 citations

Non-volatile Memory, Electrical Engineering, Engineering +12

Hot-electron injection into the oxide in n-channel MOS devices

B. Eitan, D. Frohman‐Bentchkowsky · IEEE Transactions on Electron Devices · 1981 · 141 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device

E. Lusky, Yosi Shacham‐Diamand, I. Bloom et al. · IEEE Electron Device Letters · 2001 · 81 citations

Engineering, Subthreshold Slope, Semiconductor Device +18

Surface conduction in short-channel MOS devices as a limitation to VLSI scaling

B. Eitan, D. Frohman‐Bentchkowsky · IEEE Transactions on Electron Devices · 1982 · 79 citations

Device Modeling, Electrical Engineering, Engineering +15