I. Bloom

NROM: A novel localized trapping, 2-bit nonvolatile memory cell

B. Eitan, Paolo Pavan, I. Bloom et al. · IEEE Electron Device Letters · 2000 · 546 citations · Full text

Non-volatile Memory, Engineering, Emerging Memory Technology +19

Critical behavior of the electrical transport properties in a tunneling-percolation system

Z. Rubin, S. A. Sunshine, Michael B. Heaney et al. · Physical review. B, Condensed matter · 1999 · 172 citations

Engineering, Tunneling-percolation System, Soft Matter +16

1/ <i>f</i> noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulation

I. Bloom, Y. Nemirovsky · Applied Physics Letters · 1991 · 130 citations

Semiconductors, Electrical Engineering, Engineering +13

1/f Noise in CMOS transistors for analog applications from subthreshold to saturation

Claudio Jakobson, I. Bloom, Y. Nemirovsky · Solid-State Electronics · 1998 · 105 citations

Electrical Engineering, Engineering, Physics +8

Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device

E. Lusky, Yosi Shacham‐Diamand, I. Bloom et al. · IEEE Electron Device Letters · 2001 · 81 citations

Engineering, Subthreshold Slope, Semiconductor Device +18