I. Bloom - Concepedia

Author

I. Bloom

Technion – Israel Institute of Technology ORCID

Also Known As

I. Bloom, Ilan Bloom, Ilan H. Bloom

Publications

Citations

H-Index

Concepts

All Affiliations

Technion – Israel Institute of Technology Tel Aviv University University of Modena and Reggio Emilia University of Illinois Urbana-Champaign Hebrew University of Jerusalem

About

I. Bloom is an author at Technion – Israel Institute of Technology specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	30	1.8K
2	Applied Physics	19	24	1.7K
3	Computer Engineering	11	11	919
4	Education	1	1	17
5	Natural Sciences	1	1	58

I. Bloom

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
NROM: A novel localized trapping, 2-bit nonvolatile memory cell B. Eitan, Paolo Pavan, I. Bloom, IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureIntegrated Circuits	2000	546
Critical behavior of the electrical transport properties in a tunneling-percolation system Z. Rubin, S. A. Sunshine, Michael B. Heaney, Physical review. B, Condensed matter EngineeringTunneling-percolation SystemSoft MatterTunneling MicroscopyTunneling	1999	172
1/ <i>f</i> noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulation I. Bloom, Y. Nemirovsky Applied Physics Letters SemiconductorsElectrical EngineeringEngineeringPhysicsElectronic Engineering	1991	130
1/f Noise in CMOS transistors for analog applications from subthreshold to saturation Claudio Jakobson, I. Bloom, Y. Nemirovsky Solid-State Electronics Electrical EngineeringEngineeringPhysicsCmos TransistorsAnalog Design	1998	105
Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device E. Lusky, Yosi Shacham‐Diamand, I. Bloom, IEEE Electron Device Letters EngineeringSubthreshold SlopeSemiconductor DevicePhysical Design (Electronics)Nanoelectronics	2001	81
Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectric E. Lusky, Yosi Shacham‐Diamand, I. Bloom, IEEE Electron Device Letters Retention LossElectrical EngineeringEngineeringPhysicsNanoelectronics	2002	66
Data retention reliability model of NROM nonvolatile memory products M. Janai, B. Eitan, A. Shappir, IEEE Transactions on Device and Materials Reliability Non-volatile MemoryEngineeringComputer ArchitectureNanoelectronicsMemory	2004	66
Noise properties of ferromagnetic tunnel junctions E. R. Nowak, R. D. Merithew, M. B. Weissman, Journal of Applied Physics EngineeringMagnetic ResonanceJunction BiasesSpintronic MaterialSpin Dynamic	1998	58
Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells Luca Larcher, G. Verzellesi, Paolo Pavan, IEEE Transactions on Electron Devices Device ModelingNon-volatile MemoryElectrical EngineeringEngineeringApplied Physics	2002	56
Investigation of Channel Hot Electron Injection by Localized Charge-Trapping Nonvolatile Memory Devices E. Lusky, Yosi Shacham‐Diamand, G. Mitenberg, IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringNovel Measurement MethodCharge TransportSemiconductor Device	2004	52

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