IEEE Electron Device Letters · 2001 · 81 citations · 10 references
EngineeringSubthreshold SlopeSemiconductor DevicePhysical Design (Electronics)NanoelectronicsElectronic EngineeringSpatial DistributionElectronic PackagingDevice ModelingElectrical EngineeringPhysicsBias Temperature InstabilityTime-dependent Dielectric BreakdownComputer EngineeringMicroelectronicsChe InjectionStress-induced Leakage CurrentApplied PhysicsChannel Hot ElectronNrom/sup Tm/ DeviceElectrical Insulation
Channel hot electron (CHE) injection, is widely used as main programming method in flash products. The spatial distribution could only be measured indirectly through stress-based experiments. A simple measurement technique to spatially characterize CHE injection is presented. It is shown that subthreshold slope degradation during programming of NROM/sup TM/ device provides the location and distribution of the injected electrons. It is shown that injection takes place mostly above the drain region and thus, results in subthreshold slope degradation. It is further shown, based on two-dimensional modeling, that charge distribution width is narrower than 40 nm.
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Flash memory cells-an overview
Paolo Pavan, R. Bez, P. Olivo et al. · Proceedings of the IEEE · 1997 · 705 citations
NROM: A novel localized trapping, 2-bit nonvolatile memory cell
B. Eitan, Paolo Pavan, I. Bloom et al. · IEEE Electron Device Letters · 2000 · 546 citations · Full text
Non-volatile Memory, Engineering, Emerging Memory Technology +19