D. Frohman‐Bentchkowsky

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Publications

Citations

1.9K

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Active since

1968

Affiliations

Hebrew University of Jerusalem(Current)

Intel (United States)

Fairchild Semiconductor (United States)

General Electric (United States)

D. Frohman‐Bentchkowsky is an author at Hebrew University of Jerusalem specializing in semiconductor devices, engineering, and electrical engineering.

Publications per year

1968–1986

Publications

Trap generation and occupation dynamics in SiO2 under charge injection stress

Y. Nissan‐Cohen, J. Shappir, D. Frohman‐Bentchkowsky · Journal of Applied Physics · 1986 · 207 citations

Engineering, Materials Engineering, Materials Science +16

Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) Structures

D. Frohman‐Bentchkowsky, M. Lenzlinger · Journal of Applied Physics · 1969 · 193 citations

Engineering, Electrical Engineering, Materials Science +17

Hot-electron injection into the oxide in n-channel MOS devices

B. Eitan, D. Frohman‐Bentchkowsky · IEEE Transactions on Electron Devices · 1981 · 141 citations

Engineering, Electrical Engineering, Microelectronics +16

Dynamic model of trapping-detrapping in SiO2

Y. Nissan‐Cohen, J. Shappir, D. Frohman‐Bentchkowsky · Journal of Applied Physics · 1985 · 134 citations

Engineering, Electrical Engineering, Materials Science +16

High-field and current-induced positive charge in thermal SiO2 layers

Y. Nissan‐Cohen, J. Shappir, D. Frohman‐Bentchkowsky · Journal of Applied Physics · 1985 · 126 citations

Engineering, Electrical Engineering, Materials Science +17

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