R.J. Van Overstraeten

Author

Also Known As

R J van Overstraeten, R. J. VAN OVERSTRAETEN, R. J. Van Overstraeten, R. J. van Overstraeten, R.J. Van Overstraeten, R.J. van Overstraeten, ROGER J. VAN OVERSTRAETEN, Roger J. Van Overstraeten, Roger J. Van overstraeten, Roger J. van Overstraeten

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

KU Leuven IMEC

About

R.J. Van Overstraeten is an author at KU Leuven specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	25	1.2K
2	Applied Physics	18	23	1.2K
3	Electrical Engineering	17	21	1.1K
4	Materials Science	9	9	318
5	Materials Engineering	1	1	10

R.J. Van Overstraeten

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Transport equations in heavy doped silicon R.J. Van Overstraeten, H. DeMan, R. Mertens IEEE Transactions on Electron Devices Electrical EngineeringIntrinsic ConcentrationHeavy Doped SemiconductorEngineeringPhysics	1973	277
Theory of the MOS transistor in weak inversion-new method to determine the number of surface states R.J. Van Overstraeten, G. Declerck, Paul A. Muls IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringMos Transistor	1975	177
Measurement of the minority-carrier transport parameters in heavily doped silicon R. Mertens, J.L. van Meerbergen, J. Nijs, IEEE Transactions on Electron Devices Minority-carrier Transport ParametersWide-bandgap SemiconductorEngineeringDiffusion LengthSilicon On Insulator	1980	102
Calculation of the emitter efficiency of bipolar transistors R. Mertens, H. DeMan, R.J. Van Overstraeten IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringRf SemiconductorBipolar Transistor	1973	91
Heavy doping effects in silicon R.J. Van Overstraeten, R. Mertens Solid-State Electronics Applied PhysicsPhysicsSilicon On Insulator	1987	77
Inadequacy of the classical theory of the MOS transistor operating in weak inversion R.J. Van Overstraeten, G. Declerck, G. Broux IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringClassical TheoryEngineeringMos Transistor	1973	57
An analytical model for the determination of the transient response of CML and ECL gates M Ghannam, R. Mertens, R.J. Van Overstraeten IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringEcl GatesEmitter Follower Delay	1990	47
Simple technique for determination of centroid of nitride charge in MNOS structures H.E. Maes, R.J. Van Overstraeten Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringPhysicsNanoelectronics	1975	44
Effect of surface recombination on the transient decay of excess carriers produced by short wavelength laser pulses Mohit Tyagi, J.F. Nijs, R.J. Van Overstraeten Solid-State Electronics PhotonicsEngineeringPhysicsOptical PropertiesLaser-induced Breakdown	1982	43
Theoretical calculations of the Fermi level and of other parameters in phosphorus doped silicon at diffusion temperatures Rajeev Kumar Jain, R.J. Van Overstraeten IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringEngineeringTheoretical CalculationsPhysics	1974	36

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