R.J. Van Overstraeten

Transport equations in heavy doped silicon

R.J. Van Overstraeten, H. DeMan, R. Mertens · IEEE Transactions on Electron Devices · 1973 · 277 citations

Electrical Engineering, Intrinsic Concentration, Heavy Doped Semiconductor +15

Theory of the MOS transistor in weak inversion-new method to determine the number of surface states

R.J. Van Overstraeten, G. Declerck, Paul A. Muls · IEEE Transactions on Electron Devices · 1975 · 177 citations

Device Modeling, Electrical Engineering, Semiconductor Device +14

Measurement of the minority-carrier transport parameters in heavily doped silicon

R. Mertens, J.L. van Meerbergen, J. Nijs et al. · IEEE Transactions on Electron Devices · 1980 · 102 citations

Minority-carrier Transport Parameters, Wide-bandgap Semiconductor, Engineering +16

Calculation of the emitter efficiency of bipolar transistors

R. Mertens, H. DeMan, R.J. Van Overstraeten · IEEE Transactions on Electron Devices · 1973 · 91 citations

Device Modeling, Electrical Engineering, Engineering +13

Heavy doping effects in silicon

R.J. Van Overstraeten, R. Mertens · Solid-State Electronics · 1987 · 77 citations

Applied Physics, Physics, Silicon On Insulator